N-channel enhancement mode power MOSFET, surface mountable in a D2PAK (TO-263) package. Features a 25V drain-source voltage, 85A continuous drain current, and low 6mΩ drain-source resistance at 10V. This single-element transistor offers a typical gate charge of 49nC at 5V and input capacitance of 1510pF at 25V. Maximum power dissipation is 96000mW, with an operating temperature range of -55°C to 150°C. The lead-frame SMT package has a 3-pin configuration with gull-wing leads and a tab for enhanced thermal performance.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
Advanced Power Electronics AP85L02S technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-263
Package/Case
D2PAK
Package Description
Double Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
10.1
Package Width (mm)
9.05
Package Height (mm)
4.75
Seated Plane Height (mm)
4.9
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-263
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
25V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
85A
Maximum Drain Source Resistance
6@10VmOhm
Typical Gate Charge @ Vgs
49@5VnC
Typical Input Capacitance @ Vds
1510@25VpF
Maximum Power Dissipation
96000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Advanced Power Electronics AP85L02S Datasheet
Download the complete datasheet for Advanced Power Electronics AP85L02S to view detailed technical specifications.
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