Advanced Power Technology
APT10026JN
Power Field-Effect Transistor, 33A I(D), 1000V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
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Technical Specifications
Advanced Power Technology APT10026JN technical specifications.
General
Max Operating Temperature
150
Number of Terminals
4
Terminal Position
UPPER
Number of Elements
1
Compliance
RoHS
Yes
REACH
unknown
Military Spec
False
Datasheet
Advanced Power Technology APT10026JN Datasheet
Download the complete datasheet for Advanced Power Technology APT10026JN to view detailed technical specifications.
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