Advanced Power Technology is a leading manufacturer of high-performance power semiconductor devices, specializing in silicon carbide (SiC) and insulated-gate bipolar transistors (IGBTs). They provide solutions for a wide range of industries, including electric vehicles, renewable energy, and industrial automation.
Bridge Rectifier Diode, 25A, 800V, 4-Element
600V 60A Silicon Rectifier Diode, TO-247
Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Power Field-Effect Transistor, 6.5A I(D), 900V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 15A, 1000V V(RRM), Silicon, TO-247, TO-247, 2 PIN
Power Field-Effect Transistor, 8A I(D), 1200V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
Insulated Gate Bipolar Transistor, 67A I(C), 600V V(BR)CES, N-Channel, ISOTOP-4 PIN
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN
Power Field-Effect Transistor, 44A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4
Rectifier Diode, 1 Phase, 2 Element, 15A, 1200V V(RRM), Silicon, TO-247AD, TO-247, 3 PIN
Power Field-Effect Transistor, 100A I(D), 300V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3
Rectifier Diode, 1 Phase, 2 Element, 14A, 600V V(RRM), Silicon, TO-247AD, TO-247, 3 PIN
Rectifier Diode, 1 Phase, 1 Element, 30A, 400V V(RRM), Silicon, TO-247, TO-247, 2 PIN
Power Field-Effect Transistor, 7A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
Insulated Gate Bipolar Transistor, 56A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN
Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
Insulated Gate Bipolar Transistor, 36A I(C), 1200V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN
Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Power Field-Effect Transistor, 100A I(D), 200V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
Insulated Gate Bipolar Transistor, 400A I(C), 1700V V(BR)CES, N-Channel, MODULE-7
Insulated Gate Bipolar Transistor, 96A I(C), 1200V V(BR)CES, N-Channel, B2, TMAX-3
Power Field-Effect Transistor, 9A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-3, 2 PIN
Insulated Gate Bipolar Transistor, 460A I(C), 600V V(BR)CES, N-Channel, MODULE-7
Power Field-Effect Transistor, 30A I(D), 600V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN