This device is an N-channel enhancement-mode power MOSFET in the AP6N3R2 series. Family-level datasheet evidence shows a 60 V drain-source rating and 3.2 mΩ maximum on-resistance at 10 V gate drive and 60 A test current. The gate threshold voltage is specified from 2 V to 5 V, with typical total gate charge of 152 nC and typical input capacitance of 8400 pF. The body diode forward voltage is rated to 1.3 V maximum and reverse recovery time is listed as 80 ns typical.
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Advanced Power AP6N3R2ALI technical specifications.
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Static On-Resistance | 3.2 maxmΩ |
| Gate Threshold Voltage | 2 to 5V |
| Forward Transconductance | 80 typS |
| Total Gate Charge | 152 typ, 243 maxnC |
| Gate-Source Charge | 44 typnC |
| Gate-Drain Charge | 49 typnC |
| Input Capacitance | 8400 typ, 13440 maxpF |
| Output Capacitance | 3670 typpF |
| Reverse Transfer Capacitance | 33 typpF |
| Drain-Source Leakage Current | 25 maxµA |
| Gate-Source Leakage Current | 100 maxnA |
| Body Diode Forward Voltage | 1.3 maxV |
| Reverse Recovery Time | 80 typns |
| Reverse Recovery Charge | 100 typnC |
