This device is an N-channel enhancement-mode power MOSFET rated for 60 V drain-to-source voltage and packaged in TO-220(P). It supports up to 130 A continuous drain current at 25 °C case temperature and 160 A pulsed drain current. The datasheet specifies a maximum drain-source on-resistance of 3.2 mΩ at 10 V gate drive and 60 A drain current, along with 243 nC maximum total gate charge. The part is described as RoHS compliant and halogen-free, with an operating junction temperature range from -55 °C to 150 °C.
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Advanced Power AP6N3R2P technical specifications.
| Transistor Type | N-Channel Enhancement Mode Power MOSFET |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 130A |
| Continuous Drain Current at 100°C | 80A |
| Pulsed Drain Current | 160A |
| Power Dissipation at Tc=25°C | 138.8W |
| Operating Junction Temperature Range | -55 to 150°C |
| Storage Temperature Range | -55 to 150°C |
| Thermal Resistance Junction-Case | 0.9°C/W |
| Thermal Resistance Junction-Ambient | 62°C/W |
| On-Resistance RDS(on) Max | 3.2mΩ |
| Gate Threshold Voltage | 2 to 5V |
| Forward Transconductance | 80S |
| Drain-Source Leakage Current Max | 25µA |
| Gate-Source Leakage Current Max | 100nA |
| Total Gate Charge Max | 243nC |
| Input Capacitance Typ | 8400pF |
| Reverse Recovery Time Typ | 80ns |
| Reverse Recovery Charge Typ | 100nC |
| RoHS | Compliant |
| Halogen Free | Yes |
