This N-channel enhancement-mode power MOSFET is rated for 60 V drain-source voltage and is intended for efficient power switching applications. It provides a maximum drain-source on-resistance of 3.4 mΩ at 10 V gate drive and supports 130 A drain current at a 25°C case temperature, with 350 A pulsed drain current capability. The device is housed in the PMPAK 5x6L package, which is footprint-compatible with SO-8 and uses a backside heatsink with a lower profile. It has a maximum total gate charge of 107 nC, a maximum input capacitance of 6320 pF, and operates over a -55°C to 150°C junction temperature range. The part is RoHS compliant and halogen-free.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Advanced Power AP6N3R4CMT-L datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Advanced Power AP6N3R4CMT-L technical specifications.
| Drain-Source Voltage | 60V |
| Drain Current @ Tc=25°C | 130A |
| Drain Current @ Ta=25°C | 28.5A |
| Drain Current @ Ta=70°C | 22.8A |
| Pulsed Drain Current | 350A |
| Drain-Source On-Resistance @ VGS=10V, ID=20A | 3.4 maxmΩ |
| Drain-Source On-Resistance @ VGS=8V, ID=18.5A | 4.8 maxmΩ |
| Gate Threshold Voltage | 1.5 to 4V |
| Total Gate Charge | 107 maxnC |
| Input Capacitance | 6320 maxpF |
| Single Pulse Avalanche Energy | 163mJ |
| Power Dissipation @ Tc=25°C | 104W |
| Power Dissipation @ Ta=25°C | 5W |
| Thermal Resistance Junction-Case | 1.2°C/W |
| Thermal Resistance Junction-Ambient | 25°C/W |
| Operating Junction Temperature Range | -55 to 150°C |
| Storage Temperature Range | -55 to 150°C |
| RoHS | Compliant |
| Halogen-free | Yes |
Download the complete datasheet for Advanced Power AP6N3R4CMT-L to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
