This device is an N-channel enhancement-mode power MOSFET rated for 60 V drain-to-source voltage. The datasheet highlights 100% Rg and UIS testing together with simple gate-drive requirements. It is intended for power switching applications that require low on-resistance and rugged MOSFET behavior. The part belongs to A Power's discrete power semiconductor portfolio.
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Advanced Power AP6N3R5I technical specifications.
| Channel Type | N |
| Transistor Mode | Enhancement |
| Drain-Source Voltage | 60V |
| Gate Resistance Test Coverage | 100% |
| UIS Test Coverage | 100% |
| Gate-Source Voltage | ±20V |
| Drain Current @ Tc=25°C | 130A |
| Drain Current @ Tc=100°C | 80A |
| On-Resistance @ VGS=10V | 3.58 maxmΩ |
| Total Gate Charge | 25nC |
Download the complete datasheet for Advanced Power AP6N3R5I to view detailed technical specifications.
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