This device is an N-channel enhancement mode power MOSFET rated for 60 V drain-source voltage. It supports 130 A continuous drain current at TC = 25 °C and has a maximum drain-source on-resistance of 3.58 mΩ at VGS = 10 V and ID = 40 A. The part is offered in a TO-263(S) surface-mount package and is intended for high-current power applications with low connection resistance. It is RoHS compliant, halogen-free, and specified for a -55 °C to 150 °C junction temperature range.
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Advanced Power AP6N3R5S technical specifications.
| Transistor Type | N-Channel Enhancement Mode Power MOSFET |
| Drain-Source Voltage | 60V |
| Continuous Drain Current at TC=25°C | 130A |
| Continuous Drain Current at TC=100°C | 80A |
| Pulsed Drain Current | 300A |
| Gate-Source Voltage | +20V |
| Power Dissipation at TC=25°C | 104W |
| Power Dissipation at TA=25°C | 3.12W |
| Single Pulse Avalanche Energy | 183mJ |
| Static Drain-Source On-Resistance | 3.58 maxmΩ |
| Gate Threshold Voltage | 2 to 5V |
| Forward Transconductance | 53 typS |
| Total Gate Charge | 80 typ, 128 maxnC |
| Input Capacitance | 4500 typ, 7200 maxpF |
| Output Capacitance | 2800 typpF |
| Reverse Transfer Capacitance | 65 typpF |
| Junction Temperature Range | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 1.2°C/W |
| Thermal Resistance Junction-to-Ambient | 40°C/W |
| RoHS | Compliant |
| Halogen-free | Yes |
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