This N-channel enhancement-mode power MOSFET is rated for 60 V drain-source voltage and 70 A continuous drain current at 25°C case temperature. It is housed in a TO-220CFM insulated through-hole package and is specified with 3.99 mΩ maximum on-resistance at VGS = 10 V and ID = 30 A. The device supports fast switching with 75 ns rise time and typical capacitances of 3900 pF input and 2400 pF output at 30 V. Operating junction temperature ranges from -55°C to 150°C, and the datasheet states RoHS compliance and halogen-free construction.
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Advanced Power AP6N4R0I technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | 20V |
| Continuous Drain Current (Tc=25°C) | 70A |
| Continuous Drain Current (Tc=100°C) | 44A |
| Pulsed Drain Current | 280A |
| Drain-Source On-Resistance | 3.99mΩ |
| Power Dissipation (Tc=25°C) | 32.8W |
| Power Dissipation (Ta=25°C) | 1.92W |
| Single Pulse Avalanche Energy | 184mJ |
| Gate Threshold Voltage | 2 to 5V |
| Forward Transconductance | 52S |
| Input Capacitance | 3900pF |
| Output Capacitance | 2400pF |
| Reverse Transfer Capacitance | 168pF |
| Rise Time | 75ns |
| Operating Junction Temperature Range | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 3.8°C/W |
| Thermal Resistance Junction-to-Ambient | 65°C/W |
| RoHS | Compliant |
| Halogen Free | Yes |
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