AP6N4R2P is an N-channel enhancement-mode power MOSFET. The available datasheet content identifies a 60 V drain-source breakdown rating and a TO-220(P) package. The datasheet also highlights UIS test capability, simple drive requirements, and coverage of gate charge, capacitance, safe operating area, thermal impedance, and body-diode behavior.
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Advanced Power AP6N4R2P technical specifications.
| Transistor Type | N-Channel Power MOSFET |
| Channel Mode | Enhancement Mode |
| Drain-Source Breakdown Voltage | 60V |
| Package Type | TO-220(P) |
| UIS Tested | Yes |
| Drive Requirement | Simple |
