This N-channel enhancement mode power MOSFET is offered in a PMPAK-5x6 package that is compatible with SO-8 footprints using a backside heatsink. It is rated for 60 V drain-source voltage and specifies 6.5 mΩ maximum on-resistance at VGS = 10 V and ID = 13.5 A. Continuous drain current is specified to 21.1 A at 25 °C ambient and 68 A at 25 °C case, with 160 A pulsed drain current capability. The device is RoHS compliant, halogen-free, and 100% Rg and UIS tested.
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Advanced Power AP6N6R5MT technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | -20 to +20V |
| Continuous Drain Current @ TA=25°C | 21.1A |
| Continuous Drain Current @ TA=70°C | 16.9A |
| Continuous Drain Current @ TC=25°C | 68A |
| Pulsed Drain Current | 160A |
| Drain-Source On-Resistance @ VGS=10V, ID=13.5A | 6.5 maxmΩ |
| Gate Threshold Voltage | 2 to 5V |
| Forward Transconductance | 27 typS |
| Total Gate Charge | 45 typ, 72 maxnC |
| Input Capacitance | 2080 typ, 3328 maxpF |
| Power Dissipation @ TC=25°C | 52W |
| Power Dissipation @ TA=25°C | 5W |
| Junction-to-Case Thermal Resistance | 2.4°C/W |
| Junction-to-Ambient Thermal Resistance | 25°C/W |
| Reverse Recovery Time | 34 typns |
| Reverse Recovery Charge | 13 typnC |
| Operating Junction Temperature | -55 to 150°C |
| RoHS | Compliant |
| Halogen-free | Yes |
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