This single N-channel power MOSFET is rated for 60 V drain-to-source voltage and ±20 V gate-to-source voltage. It is offered in a TO-251VS package and is listed in the Power Mosfets family. The device specifies a maximum RDS(on) of 6.8 mΩ at 10 V gate drive. Input capacitance is specified from 2100 pF to 3360 pF, and total gate charge is specified from 47 nC to 75 nC.
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Advanced Power AP6N6R8ALJV technical specifications.
| Channel Type | N-Channel |
| Configuration | Single |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| RDS(on) Max @ VGS=10V | 6.8mΩ |
| Input Capacitance Min | 2100pF |
| Input Capacitance Max | 3360pF |
| Total Gate Charge Min | 47nC |
| Total Gate Charge Max | 75nC |
Download the complete datasheet for Advanced Power AP6N6R8ALJV to view detailed technical specifications.
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