This N-channel enhancement-mode power MOSFET is rated for 60 V drain-source voltage and 14.7 A continuous drain current. It is housed in an SO-8 surface-mount package and features 6.8 mΩ maximum on-resistance at VGS = 10 V and 18 mΩ maximum at VGS = 5 V. The device has 75.2 nC maximum total gate charge, 3360 pF maximum input capacitance, and a -55 °C to 150 °C operating junction temperature range. It is specified as RoHS compliant and halogen-free.
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Advanced Power AP6N6R8ALM technical specifications.
| Channel Type | N-Channel |
| Mode | Enhancement |
| Drain-Source Breakdown Voltage | 60V |
| Continuous Drain Current | 14.7A |
| Pulsed Drain Current | 50A |
| Gate-Source Voltage | ±20V |
| Drain-Source On-Resistance @ VGS=10V | 6.8 maxmΩ |
| Drain-Source On-Resistance @ VGS=5V | 18 maxmΩ |
| Gate Threshold Voltage | 1.4 to 3V |
| Total Gate Charge | 47 typ, 75.2 maxnC |
| Input Capacitance | 2100 typ, 3360 maxpF |
| Output Capacitance | 1000 typpF |
| Reverse Transfer Capacitance | 405 typpF |
| Reverse Recovery Time | 38 typns |
| Storage Temperature Range | -55 to 150°C |
| Operating Junction Temperature Range | -55 to 150°C |
| RoHS | Compliant |
| Halogen-free | Yes |
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