This device is an N-channel enhancement mode power MOSFET. The datasheet lists a 60 V drain-to-source breakdown rating. Advanced Power Electronics Corp. describes it as having a simple drive requirement. The datasheet also states 100% Rg and UIS test coverage.
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Advanced Power AP6N8R2ALH technical specifications.
| Transistor type | N-Channel |
| Channel mode | Enhancement Mode |
| Drain-source breakdown voltage (BVDSS) | 60V |
| UIS test coverage | 100% |
| Gate resistance test coverage | 100% |
| Drive requirement | Simple |
| Device class | Power MOSFET |
| Top marking | 6N8R2AL |
Download the complete datasheet for Advanced Power AP6N8R2ALH to view detailed technical specifications.
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