This device is an N-channel enhancement mode power MOSFET rated for 60 V drain-to-source voltage. It supports up to 112 A continuous drain current at 25 °C case temperature and is housed in a PMPAK-8 (5x6) surface-mount package. The MOSFET provides a maximum 3.28 mΩ drain-source on-resistance at 10 V gate drive, with a maximum total gate charge of 99.2 nC and maximum input capacitance of 5440 pF. It is specified as RoHS compliant and halogen-free, with an operating junction temperature range of -55 °C to 150 °C.
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Advanced Power AP6NA3R2MT technical specifications.
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | -20 to 20V |
| Continuous Drain Current (Tc=25°C) | 112A |
| Continuous Drain Current (Ta=25°C) | 24A |
| Power Dissipation (Tc=25°C) | 69.4W |
| Drain-Source On-Resistance | 3.28 max @ VGS=10V, ID=20AmΩ |
| Gate Threshold Voltage | 2 to 4V |
| Total Gate Charge | 99.2 maxnC |
| Input Capacitance | 5440 maxpF |
| Reverse Transfer Capacitance | 30 typpF |
| Forward Transconductance | 60 typS |
| Source-Drain Diode Forward Voltage | 1.3 maxV |
| Reverse Recovery Time | 42 typns |
| Reverse Recovery Charge | 37 typnC |
| Junction Temperature Range | -55 to 150°C |
| Thermal Resistance Junction-Case | 1.8°C/W |
| Thermal Resistance Junction-Ambient | 25°C/W |
| RoHS | Compliant |
| Halogen-free | Yes |
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