This N-channel enhancement mode power MOSFET is rated for 60 V drain-source operation and 76 A continuous drain current at a 25 °C case temperature. It achieves a maximum drain-source on-resistance of 3.3 mΩ at 10 V gate drive and 5.4 mΩ at 5 V, with 300 A pulsed drain current capability. The device is housed in a TO-220CFM insulated through-hole package that provides high isolation voltage capability and low thermal resistance between the tab and an external heat sink. It supports junction temperatures from -55 °C to 150 °C, offers 32.9 mJ single-pulse avalanche energy, and is specified as RoHS compliant and halogen-free.
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Advanced Power AP6NA3R3LI technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Continuous Drain Current @ Tc=25°C | 76A |
| Continuous Drain Current @ Tc=100°C | 48A |
| Pulsed Drain Current | 300A |
| Power Dissipation @ Tc=25°C | 125W |
| Power Dissipation @ Ta=25°C | 1.92W |
| Single Pulse Avalanche Energy | 32.9mJ |
| Operating Junction Temperature Range | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 3.8°C/W |
| Thermal Resistance Junction-to-Ambient | 65°C/W |
| Drain-Source On-Resistance @ Vgs=10V, Id=40A | 3.3mΩ |
| Drain-Source On-Resistance @ Vgs=5V, Id=30A | 5.4mΩ |
| Gate Threshold Voltage | 1 to 3V |
| Forward Transconductance | 100S |
| Drain-Source Leakage Current | 25µA |
| Input Capacitance | 3050 to 4880pF |
| Total Gate Charge | 60 to 96nC |
| Package | TO-220CFM(I) |
| RoHS | Compliant |
| Halogen-free | Yes |
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