This device is a single N-channel power MOSFET in a TO-252 package. It supports 60 V drain-to-source voltage and ±20 V gate-to-source voltage. The maximum RDS(on) is 3.5 mΩ at a 10 V gate drive. Typical input capacitance is listed as 3400 pF to 5440 pF, and total gate charge is listed as 62 nC to 99 nC.
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Advanced Power AP6NA3R5H technical specifications.
| Transistor Type | N-Channel |
| Configuration | Single |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Package Type | TO-252 |
| RDS(on) at VGS = 10 V | 3.5 maxmΩ |
| Input Capacitance Ciss | 3400 to 5440pF |
| Total Gate Charge Qg | 62 to 99nC |
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