This device is a single N-channel enhancement-mode power MOSFET rated for 60 V drain-to-source operation. It is offered in a TO-251VS surface-mount package and is specified with 6.5 mΩ maximum drain-source on-resistance at 10 V gate drive. The part supports up to 66 A continuous drain current, with gate-source voltage ratings of -20 V to 20 V and threshold voltage from 2 V to 4 V. Published data also lists 35 nC to 56 nC gate charge, up to 2976 pF input capacitance, 50 W power dissipation, and an operating junction temperature range from -55 °C to 150 °C.
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Advanced Power AP6NA6R5JV technical specifications.
| MOSFET Type | N-Channel Enhancement Mode |
| Configuration | Single |
| Drain-Source Breakdown Voltage | 60V |
| Continuous Drain Current | 41.8 to 66A |
| Drain-Source On-Resistance | 6.5 to 11mΩ |
| Gate-Source Voltage | -20 to 20V |
| Gate Threshold Voltage | 2 to 4V |
| Gate Charge | 35 to 56nC |
| Switching Speed | 13 to 68ns |
| Power Dissipation | 50W |
| Operating Temperature Range | -55 to 150°C |
| Input Capacitance | 1860 to 2976pF |
| Package | TO-251VS |
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