This N-channel enhancement-mode power MOSFET is rated for 60 V drain-source voltage and 80 A continuous drain current in a TO-220P through-hole package. It specifies 5 mΩ maximum on-resistance at VGS = 10 V and ID = 40 A, a 250 W power dissipation rating at TC = 25°C, and ±20 V gate-source capability. The device operates from -55°C to 150°C junction temperature and is identified as a RoHS-compliant product.
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Advanced Power AP98T06GP technical specifications.
| Channel Type | N-Channel Enhancement Mode |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 80A |
| Pulsed Drain Current | 320A |
| Gate-Source Voltage | ±20V |
| Power Dissipation | 250W |
| Operating Junction Temperature | -55 to 150°C |
| Storage Temperature | -55 to 150°C |
| Thermal Resistance Junction-Case | 0.5°C/W |
| Drain-Source On-Resistance | 5 maxmΩ |
| Gate Threshold Voltage | 2 to 4V |
| Forward Transconductance | 82 typS |
| Drain-Source Leakage Current | 25 maxµA |
| Total Gate Charge | 92 typnC |
| Input Capacitance | 3950 typpF |
| Output Capacitance | 1080 typpF |
| Reverse Transfer Capacitance | 460 typpF |
| Reverse Recovery Time | 70 typns |
| Reverse Recovery Charge | 160 typnC |
| Source-Drain Diode Forward Voltage | 1.3 maxV |
| RoHS | Compliant |
