This device is an N-channel enhancement-mode power MOSFET rated for 60 V drain-source voltage and 80 A continuous drain current at a 10 V gate drive. It is specified with a maximum drain-source on-resistance of 5 mΩ and is intended for fast-switching power applications. The package shown in the datasheet is TO-263(S), and the device is rated for 250 W total power dissipation at 25 °C case temperature. The allowable gate-source voltage is ±20 V, and the operating junction temperature range is -55 °C to 150 °C.
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Advanced Power AP98T06GS technical specifications.
| Transistor Type | N-Channel Enhancement Mode Power MOSFET |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 80A |
| Pulsed Drain Current | 320A |
| Gate-Source Voltage | ±20V |
| Drain-Source On-Resistance | 5 maxmΩ |
| Gate Threshold Voltage | 2 to 4V |
| Power Dissipation | 250W |
| Junction Temperature Range | -55 to 150°C |
| Storage Temperature Range | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 0.5°C/W |
| Thermal Resistance Junction-to-Ambient | 40°C/W |
| Total Gate Charge | 92 typ, 150 maxnC |
| Input Capacitance | 3950 typ, 6300 maxpF |
| Reverse Recovery Time | 70 typns |
| Reverse Recovery Charge | 160 typnC |
| Forward Transconductance | 82 typS |
| Package Type | TO-263(S) |
