This N-channel enhancement-mode power MOSFET is rated for 60 V drain-source voltage and up to 250 A continuous drain current at 25°C chip temperature. It specifies a maximum on-resistance of 3 mΩ at VGS = 10 V and ID = 60 A, with a 2 V to 5 V gate threshold range. The device is offered in a TO-220(P) through-hole package and supports junction temperatures from -55°C to 175°C. Typical dynamic characteristics include 170 nC total gate charge and 6800 pF input capacitance.
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Advanced Power AP9970AGP technical specifications.
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | 20V |
| Continuous Drain Current | 250A |
| Continuous Drain Current at 100°C | 120A |
| Pulsed Drain Current | 480A |
| Power Dissipation | 333W |
| On-Resistance | 3 maxmΩ |
| Gate Threshold Voltage | 2 to 5V |
| Forward Transconductance | 110 typS |
| Total Gate Charge | 170 typ, 270 maxnC |
| Input Capacitance | 6800 typ, 10880 maxpF |
| Gate Resistance | 2.1 typ, 4.2 maxΩ |
| Thermal Resistance Junction-Case | 0.45°C/W |
| Operating Junction Temperature | -55 to 175°C |
| Source-Drain Diode Forward Voltage | 1.3 maxV |
| Reverse Recovery Time | 70 typns |
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