This N-channel enhancement-mode MOSFET is designed for low-voltage switching in DC/DC converters, motor drives, and industrial power stages. It is rated for 60 V drain-source voltage, 240 A continuous drain current at 25°C silicon-limited, and 375 W total power dissipation. The device is offered in a TO-220 package and features 3.2 mΩ maximum on-resistance at VGS = 10 V, low gate charge, and fast switching characteristics. Operating junction and storage temperatures span -55°C to 175°C, and the source-drain diode has a 1.3 V maximum forward drop.
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Advanced Power AP9970GP technical specifications.
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current (Silicon Limited, Tc=25°C) | 240A |
| Continuous Drain Current (Silicon Limited, Tc=100°C) | 170A |
| Continuous Drain Current (Package Limited, Tc=25°C) | 120A |
| Pulsed Drain Current | 960A |
| Power Dissipation | 375W |
| Storage Temperature Range | -55 to 175°C |
| Operating Junction Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-Case | 0.4°C/W |
| Thermal Resistance Junction-Ambient | 62°C/W |
| Static Drain-Source On-Resistance | 3.2mΩ |
| Gate Threshold Voltage | 2 to 4V |
| Forward Transconductance | 105S |
| Drain-Source Leakage Current | 10uA |
| Gate-Source Leakage Current | ±100nA |
| Total Gate Charge | 100nC |
| Input Capacitance | 4020pF |
| Rise Time | 200ns |
| Fall Time | 240ns |
| Reverse Recovery Time | 80ns |
| Source-Drain Diode Forward Voltage | 1.3V |
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