This device is an N-channel enhancement-mode power MOSFET rated for 60 V drain-source voltage. It is specified with a maximum drain-source on-resistance of 6 mΩ at 10 V gate drive and 40 A drain current. The device is offered in a TO-252(H) surface-mount package and is intended for low-voltage applications such as DC/DC converters. It supports up to 100 A continuous drain current at 25 °C chip rating, 75 A package-limited current at 25 °C, and 300 A pulsed drain current. The datasheet states RoHS compliance, halogen-free status, and an operating junction temperature range of -55 °C to 175 °C.
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Advanced Power AP9990GH technical specifications.
| Drain-source voltage | 60V |
| Continuous drain current (chip) at Tc=25°C | 100A |
| Continuous drain current (package-limited) at Tc=25°C | 75A |
| Continuous drain current at Tc=100°C | 70A |
| Pulsed drain current | 300A |
| Drain-source on-resistance max | 6mΩ |
| Gate threshold voltage | 2 to 5V |
| Forward transconductance | 55 typS |
| Total gate charge | 59 typ, 94 maxnC |
| Gate-source charge | 14 typnC |
| Gate-drain charge | 30 typnC |
| Input capacitance | 2320 typ, 3700 maxpF |
| Output capacitance | 450 typpF |
| Reverse transfer capacitance | 280 typpF |
| Power dissipation at Tc=25°C | 125W |
| Operating junction temperature range | -55 to 175°C |
| Thermal resistance junction-case | 1.2°C/W |
| Package | TO-252(H) |
| RoHS | Compliant |
| Halogen-free | Yes |
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