This N-channel enhancement-mode power MOSFET is rated for 60 V drain-source voltage and 55 A continuous drain current at 25 °C case temperature. It provides a maximum 6 mΩ on-resistance at VGS = 10 V and ID = 30 A, with fast switching supported by 59 nC typical total gate charge. The device is supplied in a TO-220CFM(I) package and is specified for 37.5 W power dissipation at 25 °C case temperature. Operating and storage temperature ranges span -55 °C to 175 °C. The part is identified as RoHS compliant and halogen-free.
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Advanced Power AP9990GI technical specifications.
| Transistor Type | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | 20V |
| Continuous Drain Current @ Tc=25°C | 55A |
| Continuous Drain Current @ Tc=100°C | 38A |
| Pulsed Drain Current | 220A |
| Power Dissipation @ Tc=25°C | 37.5W |
| Power Dissipation @ Ta=25°C | 2.3W |
| On-Resistance Max @ VGS=10V, ID=30A | 6mΩ |
| Gate Threshold Voltage | 2 to 5V |
| Forward Transconductance | 55S |
| Drain-Source Leakage Current | 25µA |
| Gate-Source Leakage Current | 100nA |
| Total Gate Charge Typ | 59nC |
| Gate-Source Charge Typ | 14nC |
| Gate-Drain Charge Typ | 29.5nC |
| Input Capacitance Typ | 2320pF |
| Output Capacitance Typ | 450pF |
| Reverse Transfer Capacitance Typ | 280pF |
| Thermal Resistance Junction-Case Max | 4°C/W |
| Thermal Resistance Junction-Ambient Max | 65°C/W |
| Operating Junction Temperature Range | -55 to 175°C |
| Storage Temperature Range | -55 to 175°C |
| RoHS | Compliant |
| Halogen-free | Yes |
