This N-channel enhancement-mode power MOSFET is rated for 60 V drain-source voltage and 80 A continuous drain current at a 25 °C case temperature. It is part of the AP9992A series and is designed for low on-resistance and fast switching, with a maximum RDS(on) of 3.5 mΩ at VGS = 10 V and ID = 40 A. The device is offered in a TO-220CFM insulated through-hole package with 41.6 W power dissipation at a 25 °C case temperature and 3 °C/W junction-to-case thermal resistance. Gate threshold voltage is 2 to 5 V, total gate charge is typically 92 nC, and input capacitance is typically 5500 pF. The part is identified as RoHS compliant and halogen-free.
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Advanced Power AP9992AGI technical specifications.
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | 20V |
| Continuous Drain Current @ Tc=25°C | 80A |
| Continuous Drain Current @ Tc=100°C | 50A |
| Pulsed Drain Current | 300A |
| Power Dissipation @ Tc=25°C | 41.6W |
| Power Dissipation @ Ta=25°C | 1.92W |
| Operating Junction Temperature | -55 to 150°C |
| Thermal Resistance Junction-Case | 3°C/W |
| Thermal Resistance Junction-Ambient | 65°C/W |
| Static Drain-Source On-Resistance | 3.5 maxmΩ |
| Gate Threshold Voltage | 2 to 5V |
| Forward Transconductance | 80 typS |
| Drain-Source Leakage Current | 25 maxµA |
| Gate-Source Leakage Current | 100 maxnA |
| Total Gate Charge | 92 typnC |
| Input Capacitance | 5500 typpF |
| Output Capacitance | 870 typpF |
| Reverse Transfer Capacitance | 350 typpF |
| Body Diode Forward Voltage | 1.3 maxV |
| RoHS | Compliant |
| Halogen Free | Yes |
