This device is a 60 V N-channel enhancement mode power MOSFET in a TO-220(P) package. It is specified for low on-resistance with a maximum RDS(ON) of 3.5 mΩ and supports up to 165 A continuous drain current and 300 A pulsed drain current. The gate-source voltage rating is ±20 V, and the device operates over a junction temperature range of -55 °C to 150 °C. Typical dynamic characteristics include 135 nC total gate charge, 5500 pF input capacitance, and fast switching with 28 ns turn-on delay and 115 ns rise time. The part is identified as RoHS compliant and halogen-free.
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Advanced Power AP9992GP technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 165A |
| Pulsed Drain Current | 300A |
| Gate-Source Voltage | ±20V |
| Drain-Source On-Resistance | 3.5 maxmΩ |
| Gate Threshold Voltage | 2 to 5V |
| Forward Transconductance | 80 typS |
| Drain-Source Leakage Current | 25 maxuA |
| Gate-Source Leakage | ±100 maxnA |
| Total Gate Charge | 135 typ, 216 maxnC |
| Gate-Source Charge | 21 typnC |
| Gate-Drain Charge | 75 typnC |
| Turn-On Delay Time | 28 typns |
| Rise Time | 115 typns |
| Fall Time | 100 typns |
| Input Capacitance | 5500 typ, 8800 maxpF |
| Output Capacitance | 930 typpF |
| Reverse Transfer Capacitance | 670 typpF |
| Thermal Resistance Junction-to-Case | 0.75°C/W |
| Thermal Resistance Junction-to-Ambient | 62°C/W |
| Operating Junction Temperature Range | -55 to 150°C |
| Storage Temperature Range | -55 to 150°C |
| Diode Forward Voltage | 1.3 maxV |
| Reverse Recovery Time | 60 typns |
| Reverse Recovery Charge | 130 typnC |
| RoHS | Compliant |
| Halogen-free | Yes |
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