This device is an N-channel enhancement-mode power MOSFET rated for 60 V drain-source voltage. Available AP9992G family datasheet data specifies up to 84 A continuous drain current at 25 °C case temperature and 3.5 mΩ maximum on-resistance at VGS = 10 V. The device is intended for fast-switching power applications and is offered in a halogen-free form. Junction and storage temperature range is specified from -55 °C to 150 °C.
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Advanced Power AP9992GS technical specifications.
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | 20V |
| Continuous Drain Current @ Tc=25°C | 84A |
| Continuous Drain Current @ Tc=100°C | 53A |
| Pulsed Drain Current | 200A |
| Power Dissipation @ Tc=25°C | 41.6W |
| Power Dissipation @ Ta=25°C | 1.92W |
| Operating Junction Temperature | -55 to 150°C |
| Storage Temperature | -55 to 150°C |
| Thermal Resistance Junction-Case | 3°C/W |
| Thermal Resistance Junction-Ambient | 65°C/W |
| Drain-Source On-Resistance | 3.5 maxmΩ |
| Gate Threshold Voltage | 2 to 5V |
| Forward Transconductance | 80 typS |
| Drain-Source Leakage Current | 25 maxµA |
| Gate-Source Leakage Current | 100 maxnA |
| Total Gate Charge | 135 typ / 216 maxnC |
| Input Capacitance | 5500 typ / 8800 maxpF |
| Output Capacitance | 930 typpF |
| Reverse Transfer Capacitance | 670 typpF |
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