AP99T06AGP

This device is an N-channel enhancement-mode power MOSFET rated for 60 V drain-to-source voltage. It is housed in a TO-220(P) package and is specified for a maximum 4.2 mΩ static on-resistance at 10 V gate drive and 40 A drain current. The datasheet lists 120 A continuous drain current at 25°C package-limited conditions, 85 A continuous drain current at 100°C, and 320 A pulsed drain current. Typical switching characteristics include 110 nC total gate charge, 18 ns turn-on delay, 57 ns rise time, 40 ns turn-off delay, and 22 ns fall time. The junction and storage temperature range is -55°C to 150°C.