The BLW50F is a NPN transistor with a maximum collector-emitter voltage of 55V and a continuous collector current of 3.25A. It operates at frequencies up to 30 MHz and can handle a maximum power dissipation of 87W. The transistor is packaged in a SOT-123 case and is available in a tray packaging format. The operating temperature range is from -65°C to 200°C.
Frequency30 MHz
PackageSOT-123
PolarityNPN
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Technical Specifications
Advanced Semiconductor BLW50F technical specifications.
General
| Package/Case | SOT-123 |
| Collector-emitter Voltage-Max | 55V |
| Continuous Collector Current | 3.25A |
| Emitter Base Voltage (VEBO) | 4V |
| hFE Min | 19 |
| Max Collector Current | 7.5A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 87W |
| Operating Frequency | 30 MHz |
| Packaging | Tray |
| Polarity | NPN |
Compliance
| RoHS | Compliant |
Datasheet
Advanced Semiconductor BLW50F Datasheet
Download the complete datasheet for Advanced Semiconductor BLW50F to view detailed technical specifications.
No datasheet is available for this part.