The BLX15 NPN transistor from Advanced Semiconductor features a maximum collector-emitter voltage of 55V, continuous collector current of 10A, and maximum collector current of 20A. It operates within a temperature range of -55°C to 200°C and has a maximum power dissipation of 233W. The transistor is packaged in a tray format and has a high current gain of 15. It is suitable for high-power applications.
Frequency28 MHz
PolarityNPN
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Technical Specifications
Advanced Semiconductor BLX15 technical specifications.
General
| Collector-emitter Voltage-Max | 55V |
| Continuous Collector Current | 10A |
| Emitter Base Voltage (VEBO) | 4V |
| hFE Min | 15 |
| Max Collector Current | 20A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 233W |
| Operating Frequency | 28 MHz |
| Packaging | Tray |
| Polarity | NPN |
Compliance
| RoHS | Compliant |
Datasheet
Advanced Semiconductor BLX15 Datasheet
Download the complete datasheet for Advanced Semiconductor BLX15 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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