The SD1013-03 is an NPN transistor from Advanced Semiconductor with a maximum collector-emitter voltage of 35V and a continuous collector current of 1A. It operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 13W. This transistor is packaged in a tray and features a high current gain of 10. It is suitable for high-frequency applications up to 150 MHz.
Frequency150 MHz
PackageM
PolarityNPN
Quick Jump:
Technical Specifications
Advanced Semiconductor SD1013-03 technical specifications.
General
| Package/Case | M |
| Collector-emitter Voltage-Max | 35V |
| Continuous Collector Current | 1A |
| Emitter Base Voltage (VEBO) | 4V |
| hFE Min | 10 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 13W |
| Operating Frequency | 150 MHz |
| Packaging | Tray |
| Polarity | NPN |
Compliance
| RoHS | Compliant |
Datasheet
Advanced Semiconductor SD1013-03 Datasheet
Download the complete datasheet for Advanced Semiconductor SD1013-03 to view detailed technical specifications.
No datasheet is available for this part.