RF Bipolar Transistors RF Transistor
Advanced Semiconductor SD1015-06 technical specifications.
| Package/Case | M |
| Collector-emitter Voltage-Max | 18V |
| Continuous Collector Current | 1A |
| Emitter Base Voltage (VEBO) | 4V |
| hFE Min | 35 |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 10W |
| Operating Frequency | 150 MHz |
| Packaging | Tray |
| Polarity | NPN |
| RoHS | Compliant |
No datasheet is available for this part.
