The SD1480 NPN transistor from Advanced Semiconductor features a maximum collector-emitter voltage of 35V and a continuous collector current of 20A. It operates within a temperature range of -65°C to 200°C and has a maximum power dissipation of 270W. The transistor is packaged in a tray and has a high current gain of 20. It is suitable for high-frequency applications up to 175 MHz.
Frequency175 MHz
PackageM
PolarityNPN
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Technical Specifications
Advanced Semiconductor SD1480 technical specifications.
General
| Package/Case | M |
| Collector-emitter Voltage-Max | 35V |
| Continuous Collector Current | 20A |
| Emitter Base Voltage (VEBO) | 4V |
| hFE Min | 20 |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 270W |
| Operating Frequency | 175 MHz |
| Packaging | Tray |
| Polarity | NPN |
Compliance
| RoHS | Compliant |
Datasheet
Advanced Semiconductor SD1480 Datasheet
Download the complete datasheet for Advanced Semiconductor SD1480 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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