The TH430 is a high-power NPN transistor with a maximum collector-emitter voltage of 55V and a continuous collector current of 40A. It operates at frequencies up to 30 MHz and can dissipate up to 330W of power. The transistor is packaged in a M package and is available in a tray format. It has a minimum operating temperature of -65°C and a maximum operating temperature of 200°C.
Sign in to ask questions about the Advanced Semiconductor TH430 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Advanced Semiconductor TH430 technical specifications.
| Package/Case | M |
| Collector-emitter Voltage-Max | 55V |
| Continuous Collector Current | 40A |
| Emitter Base Voltage (VEBO) | 4V |
| hFE Min | 15 |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 330W |
| Operating Frequency | 30 MHz |
| Packaging | Tray |
| Polarity | NPN |
| RoHS | Compliant |
Download the complete datasheet for Advanced Semiconductor TH430 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.