The TH430 is a high-power NPN transistor with a maximum collector-emitter voltage of 55V and a continuous collector current of 40A. It operates at frequencies up to 30 MHz and can dissipate up to 330W of power. The transistor is packaged in a M package and is available in a tray format. It has a minimum operating temperature of -65°C and a maximum operating temperature of 200°C.
Frequency30 MHz
PackageM
PolarityNPN
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Technical Specifications
Advanced Semiconductor TH430 technical specifications.
General
| Package/Case | M |
| Collector-emitter Voltage-Max | 55V |
| Continuous Collector Current | 40A |
| Emitter Base Voltage (VEBO) | 4V |
| hFE Min | 15 |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 330W |
| Operating Frequency | 30 MHz |
| Packaging | Tray |
| Polarity | NPN |
Compliance
| RoHS | Compliant |
Datasheet
Advanced Semiconductor TH430 Datasheet
Download the complete datasheet for Advanced Semiconductor TH430 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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