N-channel power MOSFET uses trench technology for high-frequency switching applications. The TO-220 device is rated for 100 V drain-source voltage and 90 A continuous drain current at 25 °C case temperature. Maximum on-resistance is 7 mΩ at 10 V gate drive and 20 A drain current. The device supports a -55 °C to 175 °C junction temperature range and includes a soft-recovery body diode for power-conversion circuits.
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| FET Type | N-channel MOSFET |
| Drain-Source Voltage | 100V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current at TC=25°C | 90A |
| Continuous Drain Current at TC=100°C | 61A |
| Pulsed Drain Current | 260A |
| Power Dissipation at TC=25°C | 267W |
| Power Dissipation at TC=100°C | 133W |
| Static Drain-Source On-Resistance Max at VGS=10V | 7mΩ |
| Gate Threshold Voltage | 2.7 to 3.9V |
| Input Capacitance Max | 3430pF |
| Output Capacitance Max | 2035pF |
| Reverse Transfer Capacitance Max | 63pF |
| Total Gate Charge Max at 10V | 53nC |
| Body Diode Reverse Recovery Time Max | 65ns |
| Body Diode Reverse Recovery Charge Max | 320nC |
| Junction Temperature Range | -55 to 175°C |
| Junction-to-Case Thermal Resistance | 0.56°C/W |
| RoHS | Compliant |
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