The 100 V N-channel power MOSFET uses trench MOSFET technology for high-frequency switching. The isolated TO-220F version is rated for 58 A continuous drain current at TC=25°C with ±20 V gate-source limits and 5.6 mΩ typical on-resistance at 10 V gate drive. Dynamic ratings include 38 nC typical total gate charge, 2580 pF typical input capacitance, and 46 ns typical body-diode reverse recovery time. It is specified over a -55°C to 175°C junction and storage range and is RoHS documented.
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| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage | 100V |
| Continuous Drain Current at TC=25°C | 58A |
| Pulsed Drain Current | 260A |
| Gate-Source Voltage | ±20V |
| Static Drain-Source On-Resistance | 5.6 typ, 7 max at VGS=10V, ID=20AmΩ |
| Gate Threshold Voltage | 2.7 min, 3.3 typ, 3.9 maxV |
| Input Capacitance | 2580 typ, 3430 maxpF |
| Output Capacitance | 1530 typ, 2035 maxpF |
| Reverse Transfer Capacitance | 37 typ, 63 maxpF |
| Total Gate Charge | 38 typ, 53 max at VGS=10VnC |
| Gate Resistance | 1.5 typ, 2.3 maxΩ |
| Turn-On Delay Time | 17 typ, 38 maxns |
| Rise Time | 24 typ, 53 maxns |
| Turn-Off Delay Time | 30 typ, 66 maxns |
| Fall Time | 24 typ, 53 maxns |
| Body Diode Reverse Recovery Time | 46 typ, 65 maxns |
| Body Diode Reverse Recovery Charge | 230 typ, 320 maxnC |
| Junction and Storage Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 3.6°C/W |
| RoHS | RoHS |
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