N-channel power MOSFET uses trench technology optimized for high-frequency switching. The device is rated for 100 V drain-source voltage and 90 A continuous drain current at 10 V gate drive, with static on-resistance below 7 mΩ. It supports pulsed drain current up to 260 A, avalanche current ratings, and a junction and storage temperature range from -55 °C to 175 °C. The TO-262 package device is suited for boost converters and synchronous rectifiers in consumer, telecom, industrial power supplies, and LED backlighting.
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| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage | 100V |
| Continuous Drain Current at 25°C | 90A |
| Continuous Drain Current at 100°C | 61A |
| Pulsed Drain Current | 260A |
| Gate-Source Voltage | ±20V |
| Static Drain-Source On-Resistance at 10 V | 7 maxmΩ |
| Gate Threshold Voltage | 2.7 min, 3.3 typ, 3.9 maxV |
| Zero Gate Voltage Drain Current | 1 max at 25°C, 5 max at 55°CµA |
| Forward Transconductance | 34 typS |
| Diode Forward Voltage | 0.7 typ, 1 maxV |
| Input Capacitance | 2580 typ, 3430 maxpF |
| Output Capacitance | 1530 typ, 2035 maxpF |
| Reverse Transfer Capacitance | 37 typ, 63 maxpF |
| Total Gate Charge at 10 V | 38 typ, 53 maxnC |
| Gate Source Charge | 12 typnC |
| Gate Drain Charge | 12 typnC |
| Turn-On Delay Time | 17 typ, 38 maxns |
| Turn-Off Delay Time | 30 typ, 66 maxns |
| Body Diode Reverse Recovery Time | 46 typ, 65 maxns |
| Junction and Storage Temperature Range | -55 to 175°C |
| Junction-to-Case Thermal Resistance | 0.56 max°C/W |
| RoHS | Compliant |
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