N-channel enhancement mode power MOSFET featuring 300V drain-source voltage and 60A continuous drain current. This single-element transistor is housed in a TO-247 package with a 3-pin through-hole configuration and tab. Key specifications include a maximum gate-source voltage of ±30V, a maximum drain-source on-resistance of 56mΩ at 10V, and a maximum power dissipation of 658W. Operating temperature range is -55°C to 150°C.
PackageTO-247
MountingThrough Hole
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Technical Specifications
Alpha & Omega AOK60N30 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-247 |
| Package/Case | TO-247 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.8 |
| Package Width (mm) | 5 |
| Package Height (mm) | 21 |
| Seated Plane Height (mm) | 25.4(Max) |
| Pin Pitch (mm) | 5.44 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 300V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 60A |
| Maximum Gate Threshold Voltage | 4.1V |
| Maximum Drain Source Resistance | 56@10VmOhm |
| Typical Gate Charge @ Vgs | 88@10VnC |
| Typical Gate Charge @ 10V | 88nC |
| Typical Input Capacitance @ Vds | 4438@25VpF |
| Maximum Power Dissipation | 658000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 6USE7 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Alpha & Omega AOK60N30 Datasheet
Download the complete datasheet for Alpha & Omega AOK60N30 to view detailed technical specifications.
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