The AON6250 is an N-Channel MOSFET using trench technology optimized for high frequency switching performance. It features low conduction and switching power losses due to a combination of low RDS(ON), Ciss, and Coss. The device is designed for use in boost converters and synchronous rectifiers within consumer, telecom, industrial power supplies, and LED backlighting applications.
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| Drain-Source Voltage (Vds) | 150V |
| Continuous Drain Current (Id) | 52A |
| RDS(ON) @ Vgs=10V (Max) | 16.5mOhms |
| RDS(ON) @ Vgs=6V (Max) | 19mOhms |
| Gate Charge (Qg) @ Vgs=10V | 34nC |
| Gate-Source Voltage (Vgs) | ±20V |
| Power Dissipation (Max) | 83W |
| Operating Temperature Range | -55 to 150°C |
| RoHS | Compliant |
| Halogen Free | Yes |
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