The AONR21307 is a P-Channel enhancement mode field-effect transistor produced using advanced trench technology. It features high current capability and low on-state resistance (RDS(ON)), making it suitable for load switching and battery protection applications in notebook computers and portable devices.
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Technical Specifications
Alpha & Omega AONR21307 technical specifications.
General
| Drain-Source Voltage (Vds) | -30V |
| Continuous Drain Current (Id) | -24A |
| Drain-Source On-Resistance (Vgs=-10V) | 0.011Ohm |
| Drain-Source On-Resistance (Vgs=-4.5V) | 0.0185Ohm |
| Gate-Source Voltage (Vgs) | 25V |
| Power Dissipation (Pd) | 28W |
| Gate Threshold Voltage (Vgs-th) | 2.3V |
Compliance
| RoHS | Compliant |
| Halogen-free | Compliant |
Datasheet
Alpha & Omega AONR21307 Datasheet
Download the complete datasheet for Alpha & Omega AONR21307 to view detailed technical specifications.
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