A 30V P-channel enhancement mode MOSFET utilizing advanced trench technology to provide low RDS(ON) and high current capability. Designed for applications such as Notebook AC-in load switches.
Alpha & Omega AOSP21321 technical specifications.
| Drain-source voltage (VDS) | -30V |
| Continuous Drain Current (ID) | -11A |
| On-state resistance (RDS(ON)) at VGS=-10V | 17mΩ |
| On-state resistance (RDS(ON)) at VGS=-4.5V | 30mΩ |
| Gate-source voltage (VGS) | ±25V |
| Power dissipation (Pd) | 2W |
| Gate charge (Qg) | 18nC |
| Mounting Type | SMD |
| RoHS | Compliant |
| Halogen-free | Compliant |
Download the complete datasheet for Alpha & Omega AOSP21321 to view detailed technical specifications.
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