High-power silicon SPDT reflective RF switch operates from 8 GHz to 11 GHz for X-band communications, radar, electronic warfare, and satellite communications. The switch provides 1.2 dB typical insertion loss, 40 dB typical isolation, and 46 dBm peak power handling on the insertion loss path. CMOS and LVTTL-compatible positive control inputs allow operation without additional driver circuitry. The device uses +3.3 V and −3.3 V supplies with low supply current and operates from −40°C to +85°C in a RoHS-compliant 20-terminal 3.0 mm × 3.0 mm LGA package.
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| Switch Configuration | SPDT reflective |
| Frequency Range | 8 to 11GHz |
| Insertion Loss | 1.2 typicaldB |
| Isolation | 40 typicaldB |
| 0.1 dB Power Compression | 46dBm |
| Third-Order Intercept | 70dBm |
| Average Power Handling | 41dBm |
| Pulsed Power Handling | 44dBm |
| Peak Power Handling | 46dBm |
| Hot Switching Power at RFC | 41dBm |
| Switching Time | 60ns |
| 0.1 dB RF Settling Time | 65ns |
| Positive Supply Voltage | +3.3V |
| Negative Supply Voltage | -3.3V |
| Positive Supply Current | 130µA |
| Negative Supply Current | 500µA |
| Control Interface | CMOS-/LVTTL-compatible |
| Operating Temperature Range | -40 to +85°C |
| Package | 20-lead 3.0 mm × 3.0 mm LGA |
| RoHS | Compliant |
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These are design resources that include the Analog Devices ADRF5142BCCZN
User guide for the ADRF5142-EVALZ board, evaluating the ADRF5142 40W peak silicon SPDT switch operating from 8 GHz to 11 GHz on an 8-layer Rogers 4003C PCB.
