NE5531079 Series 460 MHz 7.5 V Operation Silicon RF Power LDMOS FET
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| Continuous Drain Current (ID) | 3A |
| DS Breakdown Voltage-Min | 7.5V |
| Gain | 20.5dB |
| Gate to Source Voltage (Vgs) | 6V |
| Lead Free | Lead Free |
| Max Frequency | 900MHz |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 10W |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
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