The NE58219-T1-A is a single NPN transistor with a collector base voltage rating of 20V and a maximum collector current of 60mA. It operates over a temperature range of -55°C to 125°C and is packaged in a surface mount configuration. The device is lead free and has a power dissipation of 100mW. It is not radiation hardened.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the California Eastern Laboratories NE58219-T1-A datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Voltage (VCEO) | 12V |
| Emitter Base Voltage (VEBO) | 3V |
| Frequency | 5GHz |
| Lead Free | Lead Free |
| Max Collector Current | 60mA |
| Max Frequency | 5GHz |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 100mW |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 100mW |
| Radiation Hardening | No |
| RoHS | Compliant |
Download the complete datasheet for California Eastern Laboratories NE58219-T1-A to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
