NE651R479 Series 1 W 35 dB 3.7 GHz Medium Power GaAs HJ-FET
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| Continuous Drain Current (ID) | 220mA |
| Drain to Source Breakdown Voltage | 12V |
| DS Breakdown Voltage-Min | 3.5V |
| Gain | 12dB |
| Gate to Source Voltage (Vgs) | 12V |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| RoHS | Compliant |
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