The PS2561DL1-1Y-A is a NPN transistor with a collector-emitter saturation voltage of 300mV and a maximum collector current of 50mA. It has a maximum operating temperature range of -55°C to 110°C and a maximum power dissipation of 150mW. The transistor is packaged in a DIP package and is available in bulk quantities. It is not radiation hardened.
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California Eastern Laboratories PS2561DL1-1Y-A technical specifications.
| Package/Case | DIP |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 50mA |
| Max Input Current | 1A |
| Max Operating Temperature | 110°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS | Compliant |
No datasheet is available for this part.