NE3210S01-T1B-A

MOSFET Super Lo Noise HJFET

PackageSO

Power165mW

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CEL NE3210S01-T1B-A technical specifications.

Package/Case

Continuous Drain Current (ID)

10mA

Drain to Source Breakdown Voltage

Gate to Source Voltage (Vgs)

-3V

Package Quantity

4000

Packaging

Tape and Reel

Power Dissipation

165mW

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.