The CEL NE3508M04-EVNF23 is an N-channel GaAs FET with a continuous drain current of 120mA and a drain to source breakdown voltage of 4V. It operates at a maximum frequency of 2GHz and has a gain of 14dB. The device is packaged in a box and has a maximum power dissipation of 175mW. It is designed to operate within a temperature range of up to 150°C.
Frequency2GHz
PolarityN-CHANNEL
Power175mW
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Technical Specifications
CEL NE3508M04-EVNF23 technical specifications.
General
| Continuous Drain Current (ID) | 120mA |
| Drain to Source Breakdown Voltage | 4V |
| Drain to Source Voltage (Vdss) | 4V |
| Frequency | 2GHz |
| Gain | 14dB |
| Gate to Source Voltage (Vgs) | -3V |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 175mW |
| Noise Figure | 0.45dB |
| P1dB | 18dBm |
| Packaging | Box |
| Polarity | N-CHANNEL |
| Power Dissipation | 175mW |
| Technology | GAAS |
Compliance
| RoHS | Compliant |
Datasheet
No datasheet is available for this part.
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