The CEL NE3512S02-T1D-A is an N-channel GaAs FET with a maximum operating temperature of 125°C and a maximum power dissipation of 165mW. It has a continuous drain current of 70mA and a drain to source voltage of 4V. The device operates at a frequency of 12 GHz and has a noise figure of 0.35 dB. It is packaged in a surface mount package and is available in quantities of 10,000 per reel.
Frequency12GHz
PackageSMD/SMT
Voltage Rating4V
Current Rating70mA
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Technical Specifications
CEL NE3512S02-T1D-A technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 70mA |
| Current Rating | 70mA |
| Drain to Source Voltage (Vdss) | 4V |
| Frequency | 12GHz |
| Gain | 13.5dB |
| Gate to Source Voltage (Vgs) | -3V |
| Max Operating Temperature | 125°C |
| Max Power Dissipation | 165mW |
| Noise Figure | 0.35dB |
| Operating Frequency | 12 GHz |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Technology | GAAS |
| Test Voltage | 2V |
| Voltage Rating | 4V |
Compliance
| RoHS | Compliant |
Datasheet
CEL NE3512S02-T1D-A Datasheet
Download the complete datasheet for CEL NE3512S02-T1D-A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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