RF MOSFET Transistors L/S Band Med Power
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| Package/Case | A |
| Continuous Drain Current (ID) | 600mA |
| Drain to Source Breakdown Voltage | 15V |
| Drain to Source Voltage (Vdss) | 15V |
| Frequency | 1.8GHz |
| Gain | 10dB |
| Gate to Source Voltage (Vgs) | 5V |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 12.5W |
| Polarity | N-CHANNEL |
| Power Dissipation | 12.5W |
| RoHS | Not Compliant |
